PART |
Description |
Maker |
KM68U4000C |
512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低电压CMOS 静RAM) 12k x8位低功耗和低电压的CMOS静态RAM(为512k x8位低功耗低电压的CMOS静态RAM)的
|
Samsung Semiconductor Co., Ltd.
|
EM680FU16 |
512K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
EM640FU8E |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70 |
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 120 ns, PDSO40 4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 70 ns, PDSO40 4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 90 ns, PDSO40 IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR 4M (512K X 8) BIT
|
FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
BS616LV8010 BS616LV8010FIP55 BS616LV8010FIP70 BS61 |
Very Low Power/Voltage CMOS SRAM 512K X 16 bit LM5010A High Voltage 1A Step Down Switching Regulator; Package: TSSOP EXP PAD; No of Pins: 14 From old datasheet system Asynchronous 8M(512Kx16) bits Static RAM LM5010A High Voltage 1A Step Down Switching Regulator; Package: LLP; No of Pins: 10 非常低功电压CMOS SRAM的为512k × 16 Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16 FLEX CONNECTOR, 12 POSN., SMT, R/A, W/EXT. SLIDER, ZIF, TAPE & REEL PKG. RoHS Compliant: Yes
|
Brilliance Semiconducto... BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
|
K6F8016R6B K6F8016R6B-F |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
WS628512LLT-70 WS628512LLST-70 WS628512LLFP-70 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
|
WINGS[Wing Shing Computer Components]
|
BS616LV8015BI BS616LV8015 BS616LV8015BC |
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
|
BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
BS616LV8022BI BS616LV8022 BS616LV8022BC |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
|
BSI[Brilliance Semiconductor]
|
HY29LV800 HY29LV800T-55 HY29LV800T-55I HY29LV800T- |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory 8兆位00万x 8/512K × 16)低压快闪记忆体
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
BS616LV4021 BS616LV4021BC BS616LV4021BI BS616LV402 |
Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
|
BSI[Brilliance Semiconductor]
|